Strain Mapping Analysis PATENT PENDING
Enhanced nanobeam diffraction resolves strain
at the nanometer-scale
High spatial resolution, high precision strain mapping in modern semiconductor devices
Acquisition of STEM reference image
Ultra-fast nanobeam precession electron diffraction scanned acquisition
Automated local strain analysis via AppFive proprietary algorithm
Spatial resolution < 2 nm attainable (FEG TEM)
Monitor engineered strain distributions in modern semiconductor devices
Expected sensitivity : < 2 x 10-4
Intuitive workflow
Strain Imaging in a pMOS device Download PDF for source details
Strain Imaging in GaN HEMT device Download PDF for source details